Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs

K. Uchida, Hiroshi Watanabe, J. Koga, A. Kinoshita, S. Takagi

研究成果: Conference contribution同行評審

19 引文 斯高帕斯(Scopus)

摘要

The electrical characteristics of ultrathin-body SOI CMOSFETs are intensively investigated. It is demonstrated that electron mobility increases as SOI thickness decreases, when SOI thickness, TSOI, is in the range from 3.5 nm to 4.5 nm. On the other hand, hole mobility decreases monotonically as TSOI decreases. In addition, it is demonstrated that, when SOI thickness is thinner than 4 nm, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.

原文English
主出版物標題SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices
發行者Institute of Electrical and Electronics Engineers Inc.
頁面8-13
頁數6
ISBN(電子)0780378261
DOIs
出版狀態Published - 3 9月 2003
事件2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 - Boston, 美國
持續時間: 3 9月 20035 9月 2003

出版系列

名字International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2003-January

Conference

Conference2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
國家/地區美國
城市Boston
期間3/09/035/09/03

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