摘要
In this paper, we demonstrated the enhancement of thermal stability of nickel germanide (NiGe) alloy up to 600 °C by using titanium nitride (TiN) metal capping. A high IONIOFF ratio of 2.9× 105 was achieved by capping TiN metal on Ni for NiGe alloy formation at 600 °C. Detailed analyses were performed for realizing the mechanism for TiN capping on NiGe/Ge, including vertical element diffusion profile observation through depth-profiling X-ray photoelectron spectroscopy (XPS), element diffusion distribution by energy-dispersive X-ray spectroscopy mapping, and direct junction leakage current path detection by conductive atomic force microscopy. The experimental results indicated that TiN capping can reduce the risk of agglomeration and form a graded NiGe/Ge Schottky junction that is beneficial for suppressing the degradation of junction leakage. Subsequently, we compared the electrical performance of TiN/NiGe/n-Ge at various N/Ti ratios of TiNs. Based on the depth-profiling XPS results and electrical performance, TiN with an N/Ti ratio of approximately 1:1 can resist the Ni and Ge diffusion, which facilitates the suppression of the agglomeration process. However, the TiN capping layers with an N/Ti ratio of less than approximately 1:1 (Ti-rich) were not favorable for resisting Ni and Ge diffusion.
原文 | English |
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文章編號 | 7885604 |
頁(從 - 到) | 2314-2320 |
頁數 | 7 |
期刊 | IEEE Transactions on Electron Devices |
卷 | 64 |
發行號 | 5 |
DOIs | |
出版狀態 | Published - 1 5月 2017 |