Experimental Realization of Thermal Stability Enhancement of Nickel Germanide Alloy by Using TiN Metal Capping

Chen-Han Chou, Yi He Tsai, Chung Chun Hsu, Yu Hau Jau, Yu Hsien Lin, Wen Kuan Yeh, Chao-Hsin Chien

    研究成果: Article同行評審

    6 引文 斯高帕斯(Scopus)

    摘要

    In this paper, we demonstrated the enhancement of thermal stability of nickel germanide (NiGe) alloy up to 600 °C by using titanium nitride (TiN) metal capping. A high IONIOFF ratio of 2.9× 105 was achieved by capping TiN metal on Ni for NiGe alloy formation at 600 °C. Detailed analyses were performed for realizing the mechanism for TiN capping on NiGe/Ge, including vertical element diffusion profile observation through depth-profiling X-ray photoelectron spectroscopy (XPS), element diffusion distribution by energy-dispersive X-ray spectroscopy mapping, and direct junction leakage current path detection by conductive atomic force microscopy. The experimental results indicated that TiN capping can reduce the risk of agglomeration and form a graded NiGe/Ge Schottky junction that is beneficial for suppressing the degradation of junction leakage. Subsequently, we compared the electrical performance of TiN/NiGe/n-Ge at various N/Ti ratios of TiNs. Based on the depth-profiling XPS results and electrical performance, TiN with an N/Ti ratio of approximately 1:1 can resist the Ni and Ge diffusion, which facilitates the suppression of the agglomeration process. However, the TiN capping layers with an N/Ti ratio of less than approximately 1:1 (Ti-rich) were not favorable for resisting Ni and Ge diffusion.

    原文English
    文章編號7885604
    頁(從 - 到)2314-2320
    頁數7
    期刊IEEE Transactions on Electron Devices
    64
    發行號5
    DOIs
    出版狀態Published - 1 五月 2017

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