Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET with High-Quality PZT and Modeling Insights in the Transient Polarization

Anne S. Verhulst*, Ali Saeidi, Igor Stolichnov, Alireza Alian, Hiroshi Iwai, Nadine Collaert, Adrian M. Ionescu

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

The steep-slope ferroelectric tunnel-FET (SS-FeTFET), consisting of an InGaAs TFET with a sub-60 mV/dec subthreshold swing (SS) at room temperature and an externally connected high-quality single-crystalline PZT capacitor, displays improved SS compared to the standalone TFET. In this article, we describe the measurement procedure and measurement results of this SS-FeTFET in great detail. To quantitatively extract the ferroelectric (FE) polarization during voltage sweeps, device simulations of the TFET are combined with the SS-FeTFET measurement results. Finally, qualitative insight in some peculiarities of the experimental observations is given, such as the apparent coercive voltage that is larger in the SS-FeTFET than in the standalone FE, the shape of the polarization during voltage sweeps, and the small polarization hysteresis loop at voltages close to the apparent coercive voltage.

原文English
文章編號8935490
頁(從 - 到)377-382
頁數6
期刊IEEE Transactions on Electron Devices
67
發行號1
DOIs
出版狀態Published - 一月 2020

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