Experimental Demonstration of Stacked Gate-All-Around Poly-Si Nanowires Negative Capacitance FETs with Internal Gate Featuring Seed Layer and Free of Post-Metal Annealing Process

Shen Yang Lee, Han Wei Chen, Chiuan Huei Shen, Po Yi Kuo, Chun Chih Chung, Yu En Huang, Hsin Yu Chen, Tien Sheng Chao*

*此作品的通信作者

研究成果: Article › 同行評審

32 引文 斯高帕斯（Scopus）

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Keyphrases

Material Science