Experimental demonstration of (111)-oriented GaAs metal-oxide-semiconductor field-effect-transistors with hetero-epitaxial Ge source/drain

Keyphrases

• Gallium Arsenide 100%
• MOSFET 100%
• (111)-oriented 100%
• Experimental Demonstration 100%
• Heteroepitaxial Structures 100%
• Ge-source 100%
• Low Density 66%
• Density of States 66%
• Doping Density 66%
• Solid Solubility 66%
• Epitaxy 33%
• Substrate Effect 33%
• High Vacuum Chemical Vapor Deposition 33%
• Ultra-high Vacuum 33%
• Ge Film 33%
• GaAs Material 33%
• Substrate Surface 33%
• Ioff 33%
• Root-mean-square Roughness 33%
• Drain Regions 33%
• Hetero 33%
• Gate-all-around (GAA) MOSFET 33%
• Surface Preparation 33%
• Epitaxial Ge Film 33%
• Substrate Orientation 33%
• N Dopants 33%
• GaAs (111)A Substrate 33%

Material Science

• Gallium Arsenide 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Doping (Additives) 40%
• Density 40%
• Film 40%
• Type Metal 40%
• Surface (Surface Science) 40%
• Chemical Vapor Deposition 20%
• Epitaxy 20%

Engineering

• Gallium Arsenide 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Solid Solubility 40%
• Dopant Density 40%
• Chemical Vapor Deposition 20%
• Vapor Deposition 20%
• Root Mean Square 20%
• Square Roughness 20%
• Drain Region 20%
• Surface Preparation 20%