摘要
For the first time, the drain-bias dependence of mean free path, predicted by previous Monte Carlo simulations, is experimentally confirmed in Si n FinFETs by using an improved formulation, considering the additional scatterings attributed to source/drain as well as the carrier degeneracy. This letter indicates that, for optimized Si n FinFETs, the carrier velocity and drive current still increase monotonically with decreasing channel length. However, the degradation in mean free path leads to the saturation in ballistic ratio (60%), resulting in quasi-ballistic transport for devices even with sub-20-nm channel length.
原文 | English |
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文章編號 | 8423118 |
頁(從 - 到) | 1397-1400 |
頁數 | 4 |
期刊 | IEEE Electron Device Letters |
卷 | 39 |
發行號 | 9 |
DOIs | |
出版狀態 | Published - 1 9月 2018 |