Experimental Analysis of Quasi-Ballistic Transport in Advanced Si n FinFETs Using New Extraction Method

Ming Huei Lin*, Pin Su, Hou Yu Chen, Jen Hsiang Lu, Vincent S. Chang, Shyh Horng Yang

*此作品的通信作者

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

For the first time, the drain-bias dependence of mean free path, predicted by previous Monte Carlo simulations, is experimentally confirmed in Si n FinFETs by using an improved formulation, considering the additional scatterings attributed to source/drain as well as the carrier degeneracy. This letter indicates that, for optimized Si n FinFETs, the carrier velocity and drive current still increase monotonically with decreasing channel length. However, the degradation in mean free path leads to the saturation in ballistic ratio (60%), resulting in quasi-ballistic transport for devices even with sub-20-nm channel length.

原文English
文章編號8423118
頁(從 - 到)1397-1400
頁數4
期刊IEEE Electron Device Letters
39
發行號9
DOIs
出版狀態Published - 1 9月 2018

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