Excess hot-carrier currents in SOI MOSFETs and its implications

Pin Su, Ken Ichi Goto, Toshihiro Sugii, Chen-Ming Hu

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

This work demonstrates that excess hot-carrier currents in SOI MOSFETs are caused by self-heating. Self-heating-free ISUB data should be used for dynamic lifetime extrapolation due to long thermal time constant. The underlying mechanism, increased impact ionization with temperature at low drain bias, is studied experimentally from the angle of thermal activation energy. Our study indicates that the driving force of impact ionization transitions from the electric field to the lattice temperature with power-supply scaling below 1.2V.

原文English
頁(從 - 到)93-97
頁數5
期刊Annual Proceedings - Reliability Physics (Symposium)
DOIs
出版狀態Published - 2002

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