Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory

Tuo-Hung Hou; Kuan Liang Lin; Jiann Shieh; Jun Hung Lin; Cheng Tung Chou; Yao Jen Lee

doi:10.1063/1.3565239

Evolution of RESET current and filament morphology in low-power HfO₂ unipolar resistive switching memory

Tuo-Hung Hou^*, Kuan Liang Lin, Jiann Shieh, Jun Hung Lin, Cheng Tung Chou, Yao Jen Lee

^*此作品的通信作者

研究成果: Article › 同行評審

45 引文斯高帕斯（Scopus）

摘要

Reduction in RESET current is crucial for future high-density resistive-switching memory. We have reported a unipolar-switching Ni/HfO ₂/Si structure with low RESET current of 50 μA and RESET power of 30 μW. In addition, a unique cycling evolution of RESET current across more than two orders of magnitude allows us to probe into the evolvement of filament morphology at nanoscale, using a simple yet quantitative model. Filament morphology was found to depend strongly on the charge-dissipation current proportional to the powers of SET voltage. Moreover, the formation of inactive semiconductive filaments plays an important role in the reduction in RESET current.

原文	English
文章編號	103511
頁（從 - 到）	1-3
頁數	3
期刊	Applied Physics Letters
卷	98
發行號	10
DOIs	https://doi.org/10.1063/1.3565239
出版狀態	Published - 7 3月 2011

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abstract = "Reduction in RESET current is crucial for future high-density resistive-switching memory. We have reported a unipolar-switching Ni/HfO 2/Si structure with low RESET current of 50 μA and RESET power of 30 μW. In addition, a unique cycling evolution of RESET current across more than two orders of magnitude allows us to probe into the evolvement of filament morphology at nanoscale, using a simple yet quantitative model. Filament morphology was found to depend strongly on the charge-dissipation current proportional to the powers of SET voltage. Moreover, the formation of inactive semiconductive filaments plays an important role in the reduction in RESET current.",

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AU - Hou, Tuo-Hung

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AU - Shieh, Jiann

AU - Lin, Jun Hung

AU - Chou, Cheng Tung

AU - Lee, Yao Jen

PY - 2011/3/7

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N2 - Reduction in RESET current is crucial for future high-density resistive-switching memory. We have reported a unipolar-switching Ni/HfO 2/Si structure with low RESET current of 50 μA and RESET power of 30 μW. In addition, a unique cycling evolution of RESET current across more than two orders of magnitude allows us to probe into the evolvement of filament morphology at nanoscale, using a simple yet quantitative model. Filament morphology was found to depend strongly on the charge-dissipation current proportional to the powers of SET voltage. Moreover, the formation of inactive semiconductive filaments plays an important role in the reduction in RESET current.

AB - Reduction in RESET current is crucial for future high-density resistive-switching memory. We have reported a unipolar-switching Ni/HfO 2/Si structure with low RESET current of 50 μA and RESET power of 30 μW. In addition, a unique cycling evolution of RESET current across more than two orders of magnitude allows us to probe into the evolvement of filament morphology at nanoscale, using a simple yet quantitative model. Filament morphology was found to depend strongly on the charge-dissipation current proportional to the powers of SET voltage. Moreover, the formation of inactive semiconductive filaments plays an important role in the reduction in RESET current.

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Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory

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Evolution of RESET current and filament morphology in low-power HfO₂ unipolar resistive switching memory