Evolution of bottom c-plane on wet-etched patterned sapphire substrate

Chien Chih Chen, Feng Ching Hsiao, Bo Wen Lin, Wen Ching Hsu, Yew-Chuhg Wu

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

Wet-etched pattern sapphire substrate (PSS) has been employed to improve the epitaxy of GaN-based LEDs. It was found that the crystal quality and performance of LEDs improved with decrease in c-plane areas of PSS. However, further decrease in bottom c-plane areas makes epitaxy of GaN film very difficult. In this research, the evolution of bottom c-plane was investigated through a systematic study. It was found that epitaxy difficulty might be due to the appearance of 6C facets {41318} and the disappearance of bottom c-plane.

原文English
期刊ECS Journal of Solid State Science and Technology
2
發行號9
DOIs
出版狀態Published - 15 11月 2013

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