Evolution of bottom c-plane on wet-etched patterned sapphire substrate

Chien Chih Chen; Feng Ching Hsiao; Bo Wen Lin; Wen Ching Hsu; Yew-Chuhg Wu

doi:10.1149/2.022309jss

Evolution of bottom c-plane on wet-etched patterned sapphire substrate

Chien Chih Chen, Feng Ching Hsiao, Bo Wen Lin, Wen Ching Hsu, Yew-Chuhg Wu

材料科學與工程學系

研究成果: Article › 同行評審

17 引文斯高帕斯（Scopus）

摘要

Wet-etched pattern sapphire substrate (PSS) has been employed to improve the epitaxy of GaN-based LEDs. It was found that the crystal quality and performance of LEDs improved with decrease in c-plane areas of PSS. However, further decrease in bottom c-plane areas makes epitaxy of GaN film very difficult. In this research, the evolution of bottom c-plane was investigated through a systematic study. It was found that epitaxy difficulty might be due to the appearance of 6C facets {41318} and the disappearance of bottom c-plane.

原文	English
頁（從 - 到）	R169-R171
期刊	ECS Journal of Solid State Science and Technology
卷	2
發行號	9
DOIs	https://doi.org/10.1149/2.022309jss
出版狀態	Published - 2013

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10.1149/2.022309jss

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abstract = "Wet-etched pattern sapphire substrate (PSS) has been employed to improve the epitaxy of GaN-based LEDs. It was found that the crystal quality and performance of LEDs improved with decrease in c-plane areas of PSS. However, further decrease in bottom c-plane areas makes epitaxy of GaN film very difficult. In this research, the evolution of bottom c-plane was investigated through a systematic study. It was found that epitaxy difficulty might be due to the appearance of 6C facets {41318} and the disappearance of bottom c-plane.",

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AU - Hsiao, Feng Ching

AU - Lin, Bo Wen

AU - Hsu, Wen Ching

AU - Wu, Yew-Chuhg

PY - 2013

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AB - Wet-etched pattern sapphire substrate (PSS) has been employed to improve the epitaxy of GaN-based LEDs. It was found that the crystal quality and performance of LEDs improved with decrease in c-plane areas of PSS. However, further decrease in bottom c-plane areas makes epitaxy of GaN film very difficult. In this research, the evolution of bottom c-plane was investigated through a systematic study. It was found that epitaxy difficulty might be due to the appearance of 6C facets {41318} and the disappearance of bottom c-plane.

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JF - ECS Journal of Solid State Science and Technology

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ER -

Evolution of bottom c-plane on wet-etched patterned sapphire substrate

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