Evolution Kinetics of Voids in Electroplated Cu-Cu Wafer Bonding

Tung Yen Lai, Meiyi Li, Tzu Yen Tseng, Tzu Chen Lin, Tsan Feng Lu, Yewchung Sermon Wu

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Cu-to-Cu direct bonding implemented in three-dimensional (3D) integrated circuits (ICs) has been widely studied. Formation of interfacial voids occurs in the absence of atomically smooth surfaces when wafers are mated together at room temperature. At elevated temperature, interfacial voids undermine the reliability of devices. Cu-Cu bonding usually accompanies oxide-oxide bonding to form hybrid bonding. Compressive stress can occur at Cu-Cu bonded interface. This study introduces artificial voids at bonded interfaces by bonding an etched Cu sample to an unetched Cu sample. The evolution and the healing kinetics of interfacial voids at temperatures from 120 °C to 250 °C were examined. Results revealed no sample bonding at temperatures below 120 °C (B120) and that healing of samples B150, B200 and B250 occurred only with compressive stress.

原文English
文章編號064009
頁數5
期刊ECS Journal of Solid State Science and Technology
10
發行號6
DOIs
出版狀態Published - 6月 2021

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