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Evidence for the electron trap state associated with N-rich clusters in InGaAsN/GaAs quantum wells
Jenn-Fang Chen
*
, P. C. Hsieh, R. S. Hsiao, J. S. Wang, J. Y. Chi
*
此作品的通信作者
電子物理學系
研究成果
:
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引文 斯高帕斯(Scopus)
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Keyphrases
Electron Traps
100%
GaAs Quantum Well
100%
InGaAsN
100%
Trap States
100%
N-rich
100%
Composition Fluctuations
57%
Quantum Well
42%
Quantum Dots
28%
Gallium Arsenide
28%
Photoluminescence Spectra
14%
Bottom Electrode
14%
Behaving
14%
Thermally Activated Processes
14%
Low Energy
14%
Emission Properties
14%
Local Region
14%
Energy Emission
14%
Spectral Broadening
14%
Dot-like
14%
Capacitance-voltage Profiling
14%
Downward Shift
14%
Island Size
14%
Engineering
Gallium Arsenide
100%
Quantum Well
100%
Phase Composition
100%
Electron Trap
100%
Ground State
60%
Quantum Dot
40%
Spectral Broadening
20%
Local Region
20%
Physics
Quantum Wells
100%
Ground State
60%
Quantum Dot
40%
Spectral Broadening
20%
Photoluminescence
20%
Earth and Planetary Sciences
Ground State
100%
Emissions
66%
Photoluminescence
33%