Event-driven incremental timing fault simulator

Shyh-Jye Jou*, S. H. Chiou, Y. S. Tao, W. Z. Shen

*此作品的通信作者

研究成果: Article同行評審

摘要

An efficient simulator of multiple sets of multiple faults, with electrical timing information for an MOS IC, is presented. The physical faults in a real circuit are modelled more realistically by the node-short, line-open and threshold voltage degradation faults at the transistor level. On using event-driven, selective trace and mixed incremental-in-space, signal and time simulation techniques, the simulation results show that it is superior to other approaches in speed, extra memory used, and precision. Moreover, this simulator is suitable for parallel simulation in a multi-processor system.

原文English
頁(從 - 到)45-54
頁數10
期刊IEE Proceedings, Part G: Circuits, Devices and Systems
140
發行號1
DOIs
出版狀態Published - 1 1月 1993

指紋

深入研究「Event-driven incremental timing fault simulator」主題。共同形成了獨特的指紋。

引用此