ESD robustness of Low Temperature Poly-Si (LTPS) diodes and TFT devices has been investigated in this paper. By using the Transmission Line Pulsing (TLP) techniques, the lt2 (secondary breakdown current) of LTPS diodes and TFT devices were measured. To evaluate the ESD robustness of components for ESD protection, the shifts of breakdown voltage and cut-in voltage of LTPS diode and TFT devices after TLP stress are considered into failure threshold judgment. From the experimental results, It2 of LTPS diodes under forward-biased stress is better than that of LTPS TFT devices. Furthermore, the It2 of LTPS TFT devices under reversebiased stress is more robust than it under forward-biased stress. Such investigation results can help us to design a successful ESD protection for the circuits on glass.