Evaluation of strain distribution in SiGe nanoshells/Si created by proximal Ge nanospheres using nanobeam electron diffraction

Chia Tsong Chen, Kang Ping Peng, Horng Chih Lin, Tom George, Pei Wen Li

研究成果: Conference contribution同行評審

摘要

We report the evaluation of 3-dimensional strain distribution in self-aligned SiGe nanoshells that were created by the Ge nanospheres (NPs) penetrating into the Si substrate using a novel selective oxidation of SiGe nanopillars approach. The Ge content and strain distribution in the shell-shaped SiGe nanosheet appear to have a monotonic increase with the depth of penetration of Ge NPs into the Si layer, which are controlled by the thermal oxidation process.

原文English
主出版物標題2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
發行者Institute of Electrical and Electronics Engineers Inc.
頁面443-445
頁數3
ISBN(電子)9781538665084
DOIs
出版狀態Published - 3月 2019
事件2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, 新加坡
持續時間: 12 3月 201915 3月 2019

出版系列

名字2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
國家/地區新加坡
城市Singapore
期間12/03/1915/03/19

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