@inproceedings{f7475f4ecbd04956919bdcd06c3e6737,
title = "Evaluation of RF and logic performance for 40 nm InAs/InGaAs composite channel HEMTs for high-speed and low-voltage applications",
abstract = "The DC and RF performances of 40 nm high electron mobility transistors (HEMTs) with composite channel of InAs channel and In0.53Ga 0.47As sub-channel were demonstrated. The drain current was 870 mA/mm (Vds=0.4V, Vgs=0V) and maximum gm was 1750 mS/mm (Vds=0.5V, V gs=-0.65V). The devices showed high current gain cutoff frequency (fT) of 420 GHz and low gate delay time of 0.77 ps owing to the nanometer gate length and extremely high electron mobility of the InAs channel. Under low DC power consumption; these InAs HEMTs still exhibited excellent RF and logic performance which indicates these devices have great potential for future high-speed and low-voltage applications.",
author = "Wu, {Chien Ying} and Heng-Tung Hsu and Kuo, {Chien I.} and Chang, {Edward Yi} and Chen, {Yu Lin}",
year = "2008",
month = dec,
day = "1",
doi = "10.1109/APMC.2008.4958378",
language = "English",
isbn = "9781424426423",
series = "Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008",
booktitle = "Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008",
note = "2008 Asia Pacific Microwave Conference, APMC 2008 ; Conference date: 16-12-2008 Through 20-12-2008",
}