Evaluation of plasma charging damage in ultrathin gate oxides

Horng-Chih Lin; Chi Chun Chen; Chao-Hsin Chien; Szu Kang Hsein; Meng Fan Wang; Tien-Sheng Chao; Tiao Yuan Huang; Chun Yen Chang

doi:10.1109/55.661167

Evaluation of plasma charging damage in ultrathin gate oxides

Horng-Chih Lin^*, Chi Chun Chen, Chao-Hsin Chien, Szu Kang Hsein, Meng Fan Wang, Tien-Sheng Chao, Tiao Yuan Huang, Chun Yen Chang

^*此作品的通信作者

研究成果: Review article › 同行評審

28 引文斯高帕斯（Scopus）

摘要

Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 nm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.

原文	English
頁（從 - 到）	68-70
頁數	3
期刊	IEEE Electron Device Letters
卷	19
發行號	3
DOIs	https://doi.org/10.1109/55.661167
出版狀態	Published - 1 3月 1998

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abstract = "Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 nm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.",

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AU - Lin, Horng-Chih

AU - Chen, Chi Chun

AU - Chien, Chao-Hsin

AU - Hsein, Szu Kang

AU - Wang, Meng Fan

AU - Chao, Tien-Sheng

AU - Huang, Tiao Yuan

AU - Chang, Chun Yen

PY - 1998/3/1

Y1 - 1998/3/1

N2 - Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 nm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.

AB - Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 nm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.

KW - Dielectric breakdown

KW - Plasma materials-processing applications

KW - Semiconductor device reliability

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

Evaluation of plasma charging damage in ultrathin gate oxides

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