@inproceedings{d2bae9401eb246d5b837a15dfab0133c,
title = "Evaluation of InAs QWFET for low power logic applications",
abstract = "An eighty nanometer gate length InAs quantum well field effect transistors has been fabricated and the digital characteristics were evaluated. The devices show a drain-source current of 1015 mA/mm and a peak gm of 1920 mS/mm at VDS = 0.5 V. The fT and fmax are 340 GHz and 220 GHz at VDS = 0.4 V, respectively. A low delay time (C totalV/ION) of 0.54 ps was also achieved. These excellent results indicate the InAs devices are the great potential option for the future low-power logic applications at post-Si CMOS technology.",
author = "Chang, {Edward Yi} and Kuo, {Chien I.} and Heng-Tung Hsu and Yasuyuki Miyamoto and Chang, {Chia Ta} and Wu, {Chien Ying}",
year = "2009",
doi = "10.1149/1.3096547",
language = "English",
isbn = "9781615676460",
series = "ECS Transactions",
number = "1 PART 2",
pages = "863--868",
booktitle = "ECS Transactions - ISTC/CSTIC 2009 (CISTC)",
edition = "1 PART 2",
note = "ISTC/CSTIC 2009 (CISTC) ; Conference date: 19-03-2009 Through 20-03-2009",
}