TY - JOUR
T1 - Evaluation of impurity migration and microwave digestion methods for lithographic materials
AU - Ko, Fu-Hsiang
AU - Hsiao, Li Tung
AU - Chou, Cheng Tung
AU - Wang, Mei Ya
AU - Wang, Tien Ko
AU - Sun, Yuh Chang
AU - Cheng, Bor Jen
AU - Yeng, Steven
AU - Dai, Bau Tong
PY - 1999/1/1
Y1 - 1999/1/1
N2 - In the section of incoming quality (IQC) or quality reliability analysis (QRA) of advanced semiconductor fabrication company, it is inevitable to regulate the strict standard for the incoming materials to ensure the reliability. In our radioactive tracer study, it is interestingly found the various amounts of metal and trace element impurities in the lithographic materials may migrate into the substrate. Based on the complex organic matrix in lithographic materials such as bottom anti-reflective coating (BARC), I-line resist and DUV resist, it is not easy to direct determine the multi-elements by the instrumentation. In this work, the lithographic materials are first decomposed by the close-vessel and open-focused microwave oven, and the digest is evaporated to incipient dryness. After adding water, the sample solutions are used either for evaluating the completeness of the digestion process by UV-VIS spectrometer, or for the determination of eleven elements using inductively coupled plasma mass spectrometry (ICP-MS). In addition, the digestion efficiency is also evaluated by the weight of total dry residual after various digestion recipes. By the complementary digestion method, the method detection limits for analytes can be achieved at lower than ng/g level. For evaluation of data accuracy, the results obtained by the two independent degestion methods are in good agreement. Moreover, the spiking recovery tests for all the elements are of 70 to 130%. According to the microcontamination control limit predicted by the SIA roadmap, the established method can meet the requirements for the quality control of lithographic materials in the future ten years.
AB - In the section of incoming quality (IQC) or quality reliability analysis (QRA) of advanced semiconductor fabrication company, it is inevitable to regulate the strict standard for the incoming materials to ensure the reliability. In our radioactive tracer study, it is interestingly found the various amounts of metal and trace element impurities in the lithographic materials may migrate into the substrate. Based on the complex organic matrix in lithographic materials such as bottom anti-reflective coating (BARC), I-line resist and DUV resist, it is not easy to direct determine the multi-elements by the instrumentation. In this work, the lithographic materials are first decomposed by the close-vessel and open-focused microwave oven, and the digest is evaporated to incipient dryness. After adding water, the sample solutions are used either for evaluating the completeness of the digestion process by UV-VIS spectrometer, or for the determination of eleven elements using inductively coupled plasma mass spectrometry (ICP-MS). In addition, the digestion efficiency is also evaluated by the weight of total dry residual after various digestion recipes. By the complementary digestion method, the method detection limits for analytes can be achieved at lower than ng/g level. For evaluation of data accuracy, the results obtained by the two independent degestion methods are in good agreement. Moreover, the spiking recovery tests for all the elements are of 70 to 130%. According to the microcontamination control limit predicted by the SIA roadmap, the established method can meet the requirements for the quality control of lithographic materials in the future ten years.
UR - http://www.scopus.com/inward/record.url?scp=0032674976&partnerID=8YFLogxK
U2 - 10.1117/12.350879
DO - 10.1117/12.350879
M3 - Conference article
AN - SCOPUS:0032674976
SN - 0277-786X
VL - 3677
SP - 907
EP - 917
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
IS - II
T2 - Proceedings of the 1999 Metrology, Inspection, and Process Control for Microlithography XIII
Y2 - 15 March 1999 through 18 March 1999
ER -