Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications

Keyphrases

• Speed-power 100%
• High Electron Mobility Transistor 100%
• Field Plate 100%
• Logic Application 100%
• Low Power Logic 100%
• Linked Fields 100%
• Electrical Characteristics 33%
• Gate Leakage Current 33%
• Off-state 33%
• Cut-off Frequency 33%
• ION-IOFF 33%
• Drain Induced Barrier Lowering 33%
• Low Subthreshold Swing 33%
• Device Performance 33%
• InAs HEMT 33%
• Source Bias 33%

Engineering

• Application Logic 100%
• Max 66%
• Cutoff Frequency 33%
• Device Performance 33%

Earth and Planetary Sciences

• High Electron Mobility Transistors 100%