Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications

In this study, we have presented a source-connected field plate (SCFP) InAs high electron mobility transistor (HEMT) and evaluated its potential for using in high-speed and low-power logic applications. The fabricated device demonstrated good electrical characteristics including low subthreshold swing (SS) of 76 mV/decade, drain induced barrier lowering (DIBL) of 44 mV/V, I_ON/I_OFF ratio of 2.4 × 10⁴, an off-state gate leakage current of less than 5 × 10⁻⁶ A/mm and a G_{m, max} of 1100 mS/mm at V_DS = 0.5 V. When increasing the drain-source bias (V_DS) to 1.0 V, the G_{m, max} increased to 1750 mS/mm with a cut-off frequency of 113 GHz. These results revealed that the fabrication of source-connected field plate InAs HEMTs achieved excellent device performance for high-speed and low-power logic applications.