Evaluation of 2d negative-capacitance fets for low-voltage SRAM applications

In this work, we comprehensively evaluate and analyze the stability and performance of 6T SRAM cells using 2D MFIS-Type negative capacitance FETs (2D-NCFETs) based on the IRDS 2030 node with 10-nm gate length. Our results indicate that 2D-NCFETs possess better RSNM than the 2D-FET counterpart under low supply voltages. Our study also shows that 2D-NCFETs have better WSNM except for \mathrm{V}-{\mathrm{DD}} =0.2\mathrm{V} due to the existence of hysteresis loop in write curve during write operation. By using write-Assist circuits or back-gating techniques, we demonstrate that the WSNM of 2D-NCFETs can be significantly improved. We further analyze the performance of read and write operations, and 2D-NCFETs have been found to possess better performance than 2D-FETs.