@inproceedings{8f720aa31c254e7f9c5cca3ba0ff74e5,
title = "Etching treatment of MILC poly-Si TFTs using CF4 plasma to improve electrical performance",
abstract = "In this study, CF4-plasma was employed to improve the electrical performance of metal-induced lateral crystallization (MILC) polycrystalline silicon thin film transistors (poly-Si TFTs). It was found that CF 4-plasma minimize effectively the trap-state density during etching surface of channel, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, low subthreshold slope, low leakage current, and high on/off current ratio.",
author = "Chang, {Chih Pang} and Yew-Chuhg Wu and Chen, {Chien Chih} and Lai, {Ming Hui}",
year = "2008",
month = dec,
day = "1",
doi = "10.1149/1.2980551",
language = "English",
isbn = "9781566776554",
series = "ECS Transactions",
number = "9",
pages = "197--199",
booktitle = "ECS Transactions - Thin Film Transistors 9, TFT 9",
edition = "9",
note = "Thin Film Transistors 9, TFT 9 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 16-10-2008",
}