Etching characteristics and plasma-induced damage of high-k Ba0.5Sr0.5TiO3 thin-film capacitors

D. S. Wuu*, C. C. Lin, Ray-Hua Horng, F. C. Liao, Y. H. Liu

*此作品的通信作者

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

The etching characteristics and plasma-induced damage of high-k BST were studied by inductively coupled plasma (ICP) using CL2/Ar gas mixtures. A chemically assisted physical etch of BST was experimentally confirmed by ICP under various CL2/Ar gas mixtures. In general, leakage current increased with increasing the ICP power or substrate bias rf power.

原文English
頁(從 - 到)2231-2236
頁數6
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
19
發行號6
DOIs
出版狀態Published - 1 11月 2001

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