ESD protection to overcome internal gate-oxide damage on digital-analog interface of mixed-mode CMOS IC's

Ming-Dou Ker*, Ta Lee Yu

*此作品的通信作者

研究成果: Article同行評審

24 引文 斯高帕斯(Scopus)

摘要

This paper reports an ESD internal gate-oxide damage occurred on the digital-analog interface of a mixed-mode CMOS IC. A new ESD protection method is proposed to rescue this internal gate-oxide damage by adding ESD-protection devices on the long metal line between digital-analog interfaces. Experimental verification has confirmed that the IC product can be rescued to pass 2-KV ESD stress from the digital/analog VDD to digital/analog VSS pads without causing any internal damage again.

原文English
頁(從 - 到)1727-1730
頁數4
期刊Microelectronics Reliability
36
發行號11-12 SPEC. ISS.
DOIs
出版狀態Published - 1996

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