摘要
This paper reports an ESD internal gate-oxide damage occurred on the digital-analog interface of a mixed-mode CMOS IC. A new ESD protection method is proposed to rescue this internal gate-oxide damage by adding ESD-protection devices on the long metal line between digital-analog interfaces. Experimental verification has confirmed that the IC product can be rescued to pass 2-KV ESD stress from the digital/analog VDD to digital/analog VSS pads without causing any internal damage again.
原文 | English |
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頁(從 - 到) | 1727-1730 |
頁數 | 4 |
期刊 | Microelectronics Reliability |
卷 | 36 |
發行號 | 11-12 SPEC. ISS. |
DOIs | |
出版狀態 | Published - 1996 |