ESD protection structure with embedded high-voltage P-type SCR for automotive vacuum-fluorescent-display (VFD) applications

Ming-Dou Ker; Wei Jen Chang; Marcus Yang; Cheng Chung Chen; Mu Chin Chan; Wuu Trong Shieh; Kuo Lung Yen

doi:10.1109/IPFA.2005.1469133

ESD protection structure with embedded high-voltage P-type SCR for automotive vacuum-fluorescent-display (VFD) applications

Ming-Dou Ker^*, Wei Jen Chang, Marcus Yang, Cheng Chung Chen, Mu Chin Chan, Wuu Trong Shieh, Kuo Lung Yen

^*此作品的通信作者

研究成果: Paper › 同行評審

1 引文斯高帕斯（Scopus）

摘要

A new ESD protection structure of HVPSCR embedded into the high-voltage PMOS device is proposed to greatly improve ESD robustness of the vacuum-fluorescent-display (VFD) driver IC for automotive electronics applications. By only adding the additional N+ diffusion into the drain region of HVPMOS, the It2 of output cell has been greatly improved form 0.07A to be greater than 6A within the almost same layout area. Such an ESD-enhanced VFD driver IC has been in mass production for automotive applications in car to sustain HBM ESD stress of up to 8kV.

原文	English
頁面	67-70
頁數	4
DOIs	https://doi.org/10.1109/IPFA.2005.1469133
出版狀態	Published - 6月 2005
事件	12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005 - Singapore, 新加坡持續時間: 27 6月 2005 → 1 7月 2005

Conference

Conference	12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005
國家/地區	新加坡
城市	Singapore
期間	27/06/05 → 1/07/05

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10.1109/IPFA.2005.1469133

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Link to publication in Scopus

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Ker, M.-D., Chang, W. J., Yang, M., Chen, C. C., Chan, M. C., Shieh, W. T., & Yen, K. L. (2005). ESD protection structure with embedded high-voltage P-type SCR for automotive vacuum-fluorescent-display (VFD) applications. 67-70. 論文發表於 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005, Singapore, 新加坡. https://doi.org/10.1109/IPFA.2005.1469133

@conference{d85bd20d6574455f9672b8de3441ed55,

title = "ESD protection structure with embedded high-voltage P-type SCR for automotive vacuum-fluorescent-display (VFD) applications",

abstract = "A new ESD protection structure of HVPSCR embedded into the high-voltage PMOS device is proposed to greatly improve ESD robustness of the vacuum-fluorescent-display (VFD) driver IC for automotive electronics applications. By only adding the additional N+ diffusion into the drain region of HVPMOS, the It2 of output cell has been greatly improved form 0.07A to be greater than 6A within the almost same layout area. Such an ESD-enhanced VFD driver IC has been in mass production for automotive applications in car to sustain HBM ESD stress of up to 8kV.",

author = "Ming-Dou Ker and Chang, {Wei Jen} and Marcus Yang and Chen, {Cheng Chung} and Chan, {Mu Chin} and Shieh, {Wuu Trong} and Yen, {Kuo Lung}",

year = "2005",

month = jun,

doi = "10.1109/IPFA.2005.1469133",

language = "English",

pages = "67--70",

note = "12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005 ; Conference date: 27-06-2005 Through 01-07-2005",

}

Ker, M-D, Chang, WJ, Yang, M, Chen, CC, Chan, MC, Shieh, WT & Yen, KL 2005, 'ESD protection structure with embedded high-voltage P-type SCR for automotive vacuum-fluorescent-display (VFD) applications', 論文發表於 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005, Singapore, 新加坡, 27/06/05 - 1/07/05 頁 67-70. https://doi.org/10.1109/IPFA.2005.1469133

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T1 - ESD protection structure with embedded high-voltage P-type SCR for automotive vacuum-fluorescent-display (VFD) applications

AU - Ker, Ming-Dou

AU - Chang, Wei Jen

AU - Yang, Marcus

AU - Chen, Cheng Chung

AU - Chan, Mu Chin

AU - Shieh, Wuu Trong

AU - Yen, Kuo Lung

PY - 2005/6

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N2 - A new ESD protection structure of HVPSCR embedded into the high-voltage PMOS device is proposed to greatly improve ESD robustness of the vacuum-fluorescent-display (VFD) driver IC for automotive electronics applications. By only adding the additional N+ diffusion into the drain region of HVPMOS, the It2 of output cell has been greatly improved form 0.07A to be greater than 6A within the almost same layout area. Such an ESD-enhanced VFD driver IC has been in mass production for automotive applications in car to sustain HBM ESD stress of up to 8kV.

AB - A new ESD protection structure of HVPSCR embedded into the high-voltage PMOS device is proposed to greatly improve ESD robustness of the vacuum-fluorescent-display (VFD) driver IC for automotive electronics applications. By only adding the additional N+ diffusion into the drain region of HVPMOS, the It2 of output cell has been greatly improved form 0.07A to be greater than 6A within the almost same layout area. Such an ESD-enhanced VFD driver IC has been in mass production for automotive applications in car to sustain HBM ESD stress of up to 8kV.

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T2 - 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005

Y2 - 27 June 2005 through 1 July 2005

ER -

ESD protection structure with embedded high-voltage P-type SCR for automotive vacuum-fluorescent-display (VFD) applications

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