ESD protection structure with embedded high-voltage P-type SCR for automotive vacuum-fluorescent-display (VFD) applications

Ming-Dou Ker*, Wei Jen Chang, Marcus Yang, Cheng Chung Chen, Mu Chin Chan, Wuu Trong Shieh, Kuo Lung Yen

*此作品的通信作者

    研究成果: Paper同行評審

    1 引文 斯高帕斯(Scopus)

    摘要

    A new ESD protection structure of HVPSCR embedded into the high-voltage PMOS device is proposed to greatly improve ESD robustness of the vacuum-fluorescent-display (VFD) driver IC for automotive electronics applications. By only adding the additional N+ diffusion into the drain region of HVPMOS, the It2 of output cell has been greatly improved form 0.07A to be greater than 6A within the almost same layout area. Such an ESD-enhanced VFD driver IC has been in mass production for automotive applications in car to sustain HBM ESD stress of up to 8kV.

    原文English
    頁面67-70
    頁數4
    DOIs
    出版狀態Published - 6月 2005
    事件12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005 - Singapore, Singapore
    持續時間: 27 6月 20051 7月 2005

    Conference

    Conference12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005
    國家/地區Singapore
    城市Singapore
    期間27/06/051/07/05

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