ESD protection for output pad with well-coupled field-oxide device in 0.5-/nm CMOS technology

Chau Neng Wu; Ming-Dou Ker

doi:10.1109/16.556162

ESD protection for output pad with well-coupled field-oxide device in 0.5-/nm CMOS technology

Chau Neng Wu^*
, Ming-Dou Ker

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

A well-coupled field-oxide device (WCFOD) is first proposed to effectively improve Electrostatic Discharge (ESD) robustness of the output pad in a 0.5-μm CMOS process. ESD-transient voltage is coupled to the bulk of field-oxide device through a parasitic capacitor to trigger on the lateral bipolar action of the field-oxide device. This WCFOD has been practically implemented in a 256-K high-speed SRAM product to sustain HBM ESD stress up to 6500 V.

原文	English
頁（從 - 到）	503-505
頁數	3
期刊	IEEE Transactions on Electron Devices
卷	44
發行號	3
DOIs	https://doi.org/10.1109/16.556162
出版狀態	Published - 1997

存取文件

10.1109/16.556162

其它文件與鏈接

Link to publication in Scopus

引用此

@article{a09ce6157950457ba0b11115463f729a,

title = "ESD protection for output pad with well-coupled field-oxide device in 0.5-/nm CMOS technology",

abstract = "A well-coupled field-oxide device (WCFOD) is first proposed to effectively improve Electrostatic Discharge (ESD) robustness of the output pad in a 0.5-μm CMOS process. ESD-transient voltage is coupled to the bulk of field-oxide device through a parasitic capacitor to trigger on the lateral bipolar action of the field-oxide device. This WCFOD has been practically implemented in a 256-K high-speed SRAM product to sustain HBM ESD stress up to 6500 V.",

author = "Wu, \{Chau Neng\} and Ming-Dou Ker",

year = "1997",

doi = "10.1109/16.556162",

language = "English",

volume = "44",

pages = "503--505",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - ESD protection for output pad with well-coupled field-oxide device in 0.5-/nm CMOS technology

AU - Wu, Chau Neng

AU - Ker, Ming-Dou

PY - 1997

Y1 - 1997

N2 - A well-coupled field-oxide device (WCFOD) is first proposed to effectively improve Electrostatic Discharge (ESD) robustness of the output pad in a 0.5-μm CMOS process. ESD-transient voltage is coupled to the bulk of field-oxide device through a parasitic capacitor to trigger on the lateral bipolar action of the field-oxide device. This WCFOD has been practically implemented in a 256-K high-speed SRAM product to sustain HBM ESD stress up to 6500 V.

AB - A well-coupled field-oxide device (WCFOD) is first proposed to effectively improve Electrostatic Discharge (ESD) robustness of the output pad in a 0.5-μm CMOS process. ESD-transient voltage is coupled to the bulk of field-oxide device through a parasitic capacitor to trigger on the lateral bipolar action of the field-oxide device. This WCFOD has been practically implemented in a 256-K high-speed SRAM product to sustain HBM ESD stress up to 6500 V.

UR - https://www.scopus.com/pages/publications/0031104437

U2 - 10.1109/16.556162

DO - 10.1109/16.556162

M3 - Article

AN - SCOPUS:0031104437

SN - 0018-9383

VL - 44

SP - 503

EP - 505

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

ER -

ESD protection for output pad with well-coupled field-oxide device in 0.5-/nm CMOS technology

摘要

存取文件

其它文件與鏈接

指紋

引用此