ESD protection for output pad with well-coupled field-oxide device in 0.5-/nm CMOS technology

Chau Neng Wu*, Ming-Dou Ker

*此作品的通信作者

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

A well-coupled field-oxide device (WCFOD) is first proposed to effectively improve Electrostatic Discharge (ESD) robustness of the output pad in a 0.5-μm CMOS process. ESD-transient voltage is coupled to the bulk of field-oxide device through a parasitic capacitor to trigger on the lateral bipolar action of the field-oxide device. This WCFOD has been practically implemented in a 256-K high-speed SRAM product to sustain HBM ESD stress up to 6500 V.

原文English
頁(從 - 到)503-505
頁數3
期刊IEEE Transactions on Electron Devices
44
發行號3
DOIs
出版狀態Published - 1997

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