ESD protection designs with lowcapacitance consideration for radiofrequency integrated circuits

Ming-Dou Ker*, Chun Yu Lin, Yuan Wen Hsiao

*此作品的通信作者

    研究成果: Chapter同行評審

    摘要

    Radio-frequency (RF) circuits have been widely designed and fabricated in CMOS processes due to the advantages of high integration and low cost for mass production. Electrostatic discharge (ESD), which has become one of the most important reliability issues in IC products, must be taken into consideration during the design phase of all ICs, including the RF front-end circuits. Without ESD protection circuits at all I/O pads, the RF performance of a wireless transceiver can be easily damaged by ESD stresses, because RF front-end circuits are always fabricated in advanced CMOS processes. Usually the I/O pads are connected to the gate terminal of MOS transistor or silicided drain/source terminal, which leads to a very low ESD robustness if no ESD protection design is applied to the I/O pad. Once the RF front-end circuit is damaged by ESD, it can not be recovered and the RF functionality is lost. Therefore, on-chip ESD protection circuits must be provided for all I/O pads in RF ICs.

    原文English
    主出版物標題Electrostatics
    主出版物子標題Theory and Applications
    發行者Nova Science Publishers, Inc.
    頁面125-158
    頁數34
    ISBN(列印)9781616685492
    出版狀態Published - 2010

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