@inproceedings{ef3a30a2187747bb857e75b6734050b9,
title = "ESD protection design with stacked low-voltage devices for high-voltage pins of battery-monitoring IC",
abstract = "For high-voltage (HV) application, an on-chip ESD protection solution has been proposed in a 0.25-μm HV BCD process by using low-voltage (LV) p-type devices with the stacked configuration. Experimental results in silicon chip have verified that the proposed design can successfully protect the 60-V pins of a battery-monitoring IC against over 8-kV human-body-mode (HBM) ESD stress.",
author = "Dai, {Chia Tsen} and Ker, {Ming Dou}",
year = "2016",
month = feb,
day = "12",
doi = "10.1109/SOCC.2015.7406987",
language = "English",
series = "International System on Chip Conference",
publisher = "IEEE Computer Society",
pages = "380--383",
editor = "Thomas Buchner and Danella Zhao and Karan Bhatia and Ramalingam Sridhar",
booktitle = "Proceedings - 28th IEEE International System on Chip Conference, SOCC 2015",
address = "United States",
note = "28th IEEE International System on Chip Conference, SOCC 2015 ; Conference date: 08-09-2015 Through 11-09-2015",
}