@inproceedings{5d6f11df51644aa7b42dccb753d37534,
title = "ESD protection design with latchup-free immunity in 120V SOI process",
abstract = "Electrostatic discharge (ESD) protection with low-voltage (LV) field-oxide devices in stacked configuration are proposed for high-voltage (HV) applications in a 0.5-μm 120V SOI process. Stacked LV field-oxide devices with different stacking numbers have been verified in silicon chip to exhibit both of high ESD robustness and latchup-free immunity for HV applications.",
author = "Huang, {Yi Jie} and Ming-Dou Ker and Huang, {Yeh Jen} and Tsai, {Chun Chien} and Jou, {Yeh Ning} and Lin, {Geeng Lih}",
year = "2015",
month = nov,
day = "20",
doi = "10.1109/S3S.2015.7333481",
language = "English",
series = "2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015",
address = "United States",
note = "IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015 ; Conference date: 05-10-2015 Through 08-10-2015",
}