TY - GEN
T1 - ESD protection design of high-linearity SPDT CMOS T/R switch for cellular applications
AU - Hung, Tao Yi
AU - Ker, Ming-Dou
PY - 2019/5/26
Y1 - 2019/5/26
N2 - Electrostatic discharge (ESD) protection design for high-linearity single-pole double-throw (SPDT) transmit/receive switch (T/R switch) at 0.9/1.8 GHz GSM band was proposed and verified in a standard 0.18-µm CMOS process. The SPDT CMOS T/R switch was implemented with body-floating technique, multi-stacked structure, and series-shunt topology to obtain low insertion loss, high power handling capability, and good isolation. With the proposed ESD protection design, the T/R switch can sustain human-body-model (HBM) ESD voltages of 3.5 kV under the positive-to-VSS stress and 5 kV under the negative-to-VSS stress. Experimental results including ESD characteristics, RF performance, and failure analysis are presented.
AB - Electrostatic discharge (ESD) protection design for high-linearity single-pole double-throw (SPDT) transmit/receive switch (T/R switch) at 0.9/1.8 GHz GSM band was proposed and verified in a standard 0.18-µm CMOS process. The SPDT CMOS T/R switch was implemented with body-floating technique, multi-stacked structure, and series-shunt topology to obtain low insertion loss, high power handling capability, and good isolation. With the proposed ESD protection design, the T/R switch can sustain human-body-model (HBM) ESD voltages of 3.5 kV under the positive-to-VSS stress and 5 kV under the negative-to-VSS stress. Experimental results including ESD characteristics, RF performance, and failure analysis are presented.
KW - ESD protection design
KW - High-linearity switch
KW - Power-rail ESD clamp circuit
KW - SPDT
KW - T/R switch
KW - Transient detection circuit
UR - http://www.scopus.com/inward/record.url?scp=85066792305&partnerID=8YFLogxK
U2 - 10.1109/ISCAS.2019.8702743
DO - 10.1109/ISCAS.2019.8702743
M3 - Conference contribution
AN - SCOPUS:85066792305
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
BT - 2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019
Y2 - 26 May 2019 through 29 May 2019
ER -