ESD protection design for wideband RF applications in 65-nm CMOS process

Li Wei Chu; Chun Yu Lin; Ming-Dou Ker; Ming Hsiang Song; Jen Chou Tseng; Chewn Pu Jou; Ming Hsien Tsai

doi:10.1109/ISCAS.2014.6865426

ESD protection design for wideband RF applications in 65-nm CMOS process

Li Wei Chu, Chun Yu Lin, Ming-Dou Ker, Ming Hsiang Song, Jen Chou Tseng, Chewn Pu Jou, Ming Hsien Tsai

研究成果: Conference contribution › 同行評審

1 引文斯高帕斯（Scopus）

摘要

All wireless communication products must meet the reliability specifications during mass production. To prevent from electrostatic discharge (ESD) damages, the ESD protection designs must be added at all input/output pads in chip. Some ESD protection designs with low parasitic capacitance for radio-frequency (RF) applications are reviewed in this paper. Besides, a novel ESD protection design is proposed and realized in a 65nm CMOS process to protect the wideband RF circuits. In this work, diodes are used for ESD protection and inductors are used for high-frequency performance fine tuning. Experimental results of the test circuits have been successfully verified.

原文	English
主出版物標題	2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	1480-1483
頁數	4
ISBN（列印）	9781479934324
DOIs	https://doi.org/10.1109/ISCAS.2014.6865426
出版狀態	Published - 1 1月 2014
事件	2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 - Melbourne, VIC, Australia 持續時間: 1 6月 2014 → 5 6月 2014

出版系列

名字	Proceedings - IEEE International Symposium on Circuits and Systems
ISSN（列印）	0271-4310

Conference

Conference	2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
國家/地區	Australia
城市	Melbourne, VIC
期間	1/06/14 → 5/06/14

存取文件

10.1109/ISCAS.2014.6865426

其它文件與鏈接

Link to publication in Scopus

引用此

Chu, L. W., Lin, C. Y., Ker, M-D., Song, M. H., Tseng, J. C., Jou, C. P., & Tsai, M. H. (2014). ESD protection design for wideband RF applications in 65-nm CMOS process. 於 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 (頁 1480-1483). [6865426] (Proceedings - IEEE International Symposium on Circuits and Systems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS.2014.6865426

@inproceedings{d44ba6124d3a41608938871692630485,

title = "ESD protection design for wideband RF applications in 65-nm CMOS process",

abstract = "All wireless communication products must meet the reliability specifications during mass production. To prevent from electrostatic discharge (ESD) damages, the ESD protection designs must be added at all input/output pads in chip. Some ESD protection designs with low parasitic capacitance for radio-frequency (RF) applications are reviewed in this paper. Besides, a novel ESD protection design is proposed and realized in a 65nm CMOS process to protect the wideband RF circuits. In this work, diodes are used for ESD protection and inductors are used for high-frequency performance fine tuning. Experimental results of the test circuits have been successfully verified.",

keywords = "Diode, ESD, radio-frequency (RF), T-coil, wideband",

author = "Chu, {Li Wei} and Lin, {Chun Yu} and Ming-Dou Ker and Song, {Ming Hsiang} and Tseng, {Jen Chou} and Jou, {Chewn Pu} and Tsai, {Ming Hsien}",

year = "2014",

month = jan,

day = "1",

doi = "10.1109/ISCAS.2014.6865426",

language = "English",

isbn = "9781479934324",

series = "Proceedings - IEEE International Symposium on Circuits and Systems",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1480--1483",

booktitle = "2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014",

address = "United States",

note = "2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 ; Conference date: 01-06-2014 Through 05-06-2014",

}

Chu, LW, Lin, CY, Ker, M-D, Song, MH, Tseng, JC, Jou, CP & Tsai, MH 2014, ESD protection design for wideband RF applications in 65-nm CMOS process. 於 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014., 6865426, Proceedings - IEEE International Symposium on Circuits and Systems, Institute of Electrical and Electronics Engineers Inc., 頁 1480-1483, 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014, Melbourne, VIC, Australia, 1/06/14. https://doi.org/10.1109/ISCAS.2014.6865426

ESD protection design for wideband RF applications in 65-nm CMOS process. / Chu, Li Wei; Lin, Chun Yu; Ker, Ming-Dou 等.
2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 1480-1483 6865426 (Proceedings - IEEE International Symposium on Circuits and Systems).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - ESD protection design for wideband RF applications in 65-nm CMOS process

AU - Chu, Li Wei

AU - Lin, Chun Yu

AU - Ker, Ming-Dou

AU - Song, Ming Hsiang

AU - Tseng, Jen Chou

AU - Jou, Chewn Pu

AU - Tsai, Ming Hsien

PY - 2014/1/1

Y1 - 2014/1/1

N2 - All wireless communication products must meet the reliability specifications during mass production. To prevent from electrostatic discharge (ESD) damages, the ESD protection designs must be added at all input/output pads in chip. Some ESD protection designs with low parasitic capacitance for radio-frequency (RF) applications are reviewed in this paper. Besides, a novel ESD protection design is proposed and realized in a 65nm CMOS process to protect the wideband RF circuits. In this work, diodes are used for ESD protection and inductors are used for high-frequency performance fine tuning. Experimental results of the test circuits have been successfully verified.

AB - All wireless communication products must meet the reliability specifications during mass production. To prevent from electrostatic discharge (ESD) damages, the ESD protection designs must be added at all input/output pads in chip. Some ESD protection designs with low parasitic capacitance for radio-frequency (RF) applications are reviewed in this paper. Besides, a novel ESD protection design is proposed and realized in a 65nm CMOS process to protect the wideband RF circuits. In this work, diodes are used for ESD protection and inductors are used for high-frequency performance fine tuning. Experimental results of the test circuits have been successfully verified.

KW - Diode

KW - ESD

KW - radio-frequency (RF)

KW - T-coil

KW - wideband

UR - http://www.scopus.com/inward/record.url?scp=84907408059&partnerID=8YFLogxK

U2 - 10.1109/ISCAS.2014.6865426

DO - 10.1109/ISCAS.2014.6865426

M3 - Conference contribution

AN - SCOPUS:84907408059

SN - 9781479934324

T3 - Proceedings - IEEE International Symposium on Circuits and Systems

SP - 1480

EP - 1483

BT - 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014

Y2 - 1 June 2014 through 5 June 2014

ER -

Chu LW, Lin CY, Ker M-D, Song MH, Tseng JC, Jou CP 等. ESD protection design for wideband RF applications in 65-nm CMOS process. 於 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 1480-1483. 6865426. (Proceedings - IEEE International Symposium on Circuits and Systems). doi: 10.1109/ISCAS.2014.6865426

ESD protection design for wideband RF applications in 65-nm CMOS process

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