@inproceedings{c9e19b7d5d43474cb3e5f3210482db13,
title = "ESD protection design for mixed-voltage-tolerant I/O buffers with substrate-triggered technique",
abstract = "A substrate-triggered technique is proposed to improve ESD protection efficiency of the stacked-NMOS device in a mixed-voltage I/O circuit. The substrate-triggered technique can further lower the trigger voltage of the stacked-NMOS device, to ensure effective ESD protection for the mixed-voltage I/O circuit. The proposed ESD protection circuit, with the substrate-triggered technique, for a 2.5 V/3.3 V tolerant mixed-voltage I/O circuit has been fabricated and verified in a 0.25 μm salicided CMOS process. Experimental results have confirmed that the HBM ESD robustness of the mixed-voltage I/O circuit can be increased ∼60% by this substrate-triggered design.",
keywords = "Circuits, CMOS process, Electrostatic discharge, MOS devices, MOSFETs, Power supplies, Protection, Robustness, Signal design, Voltage",
author = "Ming-Dou Ker and Hsu, {Hsin Chyh}",
year = "2003",
month = jan,
day = "1",
doi = "10.1109/SOC.2003.1241496",
language = "English",
series = "Proceedings - IEEE International SOC Conference, SOCC 2003",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "219--222",
editor = "Ha, {Dong S.} and Richard Auletta and John Chickanosky",
booktitle = "Proceedings - IEEE International SOC Conference, SOCC 2003",
address = "United States",
note = "IEEE International SOC Conference, SOCC 2003 ; Conference date: 17-09-2003 Through 20-09-2003",
}