@inproceedings{ede1974dcae848ed8361bbaa13f84b30,
title = "ESD protection design for CMOS RF integrated circuits",
abstract = "ESD protection design for CMOS RF integrated circuits is proposed in this paper by using the stacked polysilicon diodes as the input ESD protection devices to reduce the total input capacitance and to avoid the noise coupling from the common substrate. The ESD level of the stacked polysilicon diodes on the I/O pad is restored by using the turn-on efficient power-rail ESD clamp circuit, which is constructed by substrate-triggered technique. This polysilicon diode is fully process-compatible to general sub-quarter-micron CMOS processes.",
keywords = "CMOS integrated circuits, Capacitance, Coupling circuits, Diodes, Electrostatic discharge, Integrated circuit noise, Noise reduction, Protection, Radio frequency, Radiofrequency integrated circuits",
author = "Ming-Dou Ker and Chen, {Tung Yang} and Chang, {Chyh Yih}",
year = "2001",
month = sep,
day = "11",
language = "English",
series = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings",
publisher = "ESD Association",
pages = "344--352",
booktitle = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2001",
note = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2001 ; Conference date: 11-09-2001 Through 13-09-2001",
}