ESD protection design for 900-MHz RF receiver with 8-kV HBM ESD robustness

Ming-Dou Ker*, Wen Yu Lo, Chien Ming Lee, Chia Pei Chen, Hong Sing Kao

*此作品的通信作者

    研究成果: Paper同行評審

    30 引文 斯高帕斯(Scopus)

    摘要

    This paper presents a state-of-art ESD protection design for RF circuit with a human-body-model (HBM) ESD robustness of 8k V. By including a turn-on efficient power-rails clamp circuit into the RF circuit, the ESD clamp devices of the RF input pin are operated in the forward-biased conduction, rather than the traditional junction breakdown condition. Therefore, the dimension of ESD devices for the RF input pin can be further downsized to reduce the input capacitance loading for the RF signal. This design has been successfully applied in a 900-MHz RF receiver and fabricated in 0.25-μm CMOS process with a thick top metal layer. The experimental results have confirmed that its ESD robustness is as high as >8 kV under the HBM ESD test.

    原文English
    頁面427-430
    頁數4
    DOIs
    出版狀態Published - 1 1月 2002
    事件2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States
    持續時間: 2 6月 20024 6月 2002

    Conference

    Conference2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
    國家/地區United States
    城市Seatle, WA
    期間2/06/024/06/02

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