TY - GEN
T1 - ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications
AU - Wu, Wei Min
AU - Chen, Shih Hung
AU - Putcha, Vamsi
AU - Peralagu, Uthayasankaran
AU - Sibaja-Hernandez, Arturo
AU - Yadav, Sachin
AU - Parvais, Bertrand
AU - Alian, Alireza
AU - Collaert, Nadine
AU - Ker, Ming Dou
AU - Groeseneken, Guido
N1 - Publisher Copyright:
© 2021 EOS/ESD Association, Inc.
PY - 2021/9/26
Y1 - 2021/9/26
N2 - In this paper, Gallium Nitride (GaN) Metal-Insulator-Semiconductor (MIS)-HEMTs are compared with conventional Schottky Metal-Semiconductor HEMTs in terms of DC and ESD performance. Measurement results indicate TLP failures are highly related to 2DEG channel driving capability. The impacts of different gate interfaces in the GaN (MIS)-HEMTs on failure mechanisms are the key factor of final ESD robustness.
AB - In this paper, Gallium Nitride (GaN) Metal-Insulator-Semiconductor (MIS)-HEMTs are compared with conventional Schottky Metal-Semiconductor HEMTs in terms of DC and ESD performance. Measurement results indicate TLP failures are highly related to 2DEG channel driving capability. The impacts of different gate interfaces in the GaN (MIS)-HEMTs on failure mechanisms are the key factor of final ESD robustness.
UR - http://www.scopus.com/inward/record.url?scp=85119080098&partnerID=8YFLogxK
U2 - 10.23919/EOS/ESD52038.2021.9574716
DO - 10.23919/EOS/ESD52038.2021.9574716
M3 - Conference contribution
AN - SCOPUS:85119080098
T3 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021
BT - Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 43rd Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2021
Y2 - 26 September 2021 through 1 October 2021
ER -