摘要
An electrostatic discharge (ESD)-event detector has been designed and fabricated in a single chip to detect and alarm the ESD events in semiconductor or integrated circuit (IC) manufacturing environments. The experiment measured results showed that the peak-to-peak voltage of the detected signal during an ESD event has a strong correlation with its ESD-stress voltage level. <bold>The proposed ESD-event detector can determine a</bold> detected <bold>signal to be an ESD pulse if its signal amplitude is higher than the settable threshold and its duration time is under 500 ns.</bold> The ESD-event detector circuit, including a <bold>450 MHz</bold> logarithmic amplifier, a comparator, and a time discriminator, has been implemented in a single chip with a total silicon area of only 693 × 563 <italic>μ</italic><inline-formula><tex-math notation="LaTeX">${\mathbf{m}}^2$</tex-math></inline-formula> and fabricated by 0.18-<italic>μ</italic>m CMOS process. <bold>The detector can detect high-frequency transient signals up to 450 MHz, which has been successfully verified in the field tests by detecting the signals generated from the ESD generators, the human-body model tester, and the field-induced charged-device model tester.</bold> The proposed ESD-event detector can efficiently perform the real-time ESD monitoring applications in the IC and semiconductor manufacturing factories.
原文 | English |
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頁(從 - 到) | 1-9 |
頁數 | 9 |
期刊 | IEEE Transactions on Electromagnetic Compatibility |
DOIs | |
出版狀態 | Accepted/In press - 2022 |