TY - JOUR
T1 - ESD-Event Detector for ESD Control Applications in Semiconductor Manufacturing Factories
AU - Wu, I. Hsuan
AU - Ker, Ming Dou
N1 - Publisher Copyright:
© 1964-2012 IEEE.
PY - 2022/12/1
Y1 - 2022/12/1
N2 - An electrostatic discharge (ESD)-event detector has been designed and fabricated in a single chip to detect and alarm the ESD events in semiconductor or integrated circuit (IC) manufacturing environments. The experiment measured results showed that the peak-to-peak voltage of the detected signal during an ESD event has a strong correlation with its ESD-stress voltage level. The proposed ESD-event detector can determine a detected signal to be an ESD pulse if its signal amplitude is higher than the settable threshold and its duration time is under 500 ns. The ESD-event detector circuit, including a 450 MHz logarithmic amplifier, a comparator, and a time discriminator, has been implemented in a single chip with a total silicon area of only 693 × 563 μm2 and fabricated by 0.18-μm CMOS process. The detector can detect high-frequency transient signals up to 450 MHz, which has been successfully verified in the field tests by detecting the signals generated from the ESD generators, the human-body model tester, and the field-induced charged-device model tester. The proposed ESD-event detector can efficiently perform the real-time ESD monitoring applications in the IC and semiconductor manufacturing factories.
AB - An electrostatic discharge (ESD)-event detector has been designed and fabricated in a single chip to detect and alarm the ESD events in semiconductor or integrated circuit (IC) manufacturing environments. The experiment measured results showed that the peak-to-peak voltage of the detected signal during an ESD event has a strong correlation with its ESD-stress voltage level. The proposed ESD-event detector can determine a detected signal to be an ESD pulse if its signal amplitude is higher than the settable threshold and its duration time is under 500 ns. The ESD-event detector circuit, including a 450 MHz logarithmic amplifier, a comparator, and a time discriminator, has been implemented in a single chip with a total silicon area of only 693 × 563 μm2 and fabricated by 0.18-μm CMOS process. The detector can detect high-frequency transient signals up to 450 MHz, which has been successfully verified in the field tests by detecting the signals generated from the ESD generators, the human-body model tester, and the field-induced charged-device model tester. The proposed ESD-event detector can efficiently perform the real-time ESD monitoring applications in the IC and semiconductor manufacturing factories.
KW - Charged-device model (CDM)
KW - ESD generator
KW - ESD monitoring
KW - ESD-event detector
KW - electrostatic discharge (ESD)
KW - human-body model (HBM)
KW - logarithmic amplifier
UR - http://www.scopus.com/inward/record.url?scp=85137606301&partnerID=8YFLogxK
U2 - 10.1109/TEMC.2022.3195233
DO - 10.1109/TEMC.2022.3195233
M3 - Article
AN - SCOPUS:85137606301
SN - 0018-9375
VL - 64
SP - 1793
EP - 1801
JO - IEEE Transactions on Electromagnetic Compatibility
JF - IEEE Transactions on Electromagnetic Compatibility
IS - 6
ER -