Errors in threshold-voltage measurements of MOS transistors for dopant-profile determinations

Min Hwa Chi*, Chen-Ming Hu

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

The dopant and trap density profiles in MOSFETs can be deduced from the static and transient variations of VT caused by changes in VBS. This letter reports a study of errors in VT measurements by three different methods. Relatively small errors in VT could cause serious inaccuracies in dopant profiles. It is found that the major source of errors is the non-constancy of the surface mobility and that errors in VT measured by a "constant VGS-VDS method" cannot be eliminated easily. However, with properly chosen VGS-VT or ID, a "constant ID-VDS method" can provide almost error-free measurements of VT. The theoretical predictions agree with experiments.

原文English
頁(從 - 到)313-316
頁數4
期刊Solid State Electronics
24
發行號4
DOIs
出版狀態Published - 1 一月 1981

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