Erratum: Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal (IEEE Electron Device Lett. (2012) 33:2 (248–250) DOI: 10.1109/LED.2011.2176100)

Yao Jen Lee*, Fu Kuo Hsueh, Michael I. Current, Ching Yi Wu, Tien Sheng Chao

*此作品的通信作者

研究成果: Comment/debate

摘要

In The above letter [1], the SIMS profiles in Fig. 1 are for diffusion characteristics of ion-implanted phosphorus before/after MWA. We did not mention the concentration in the text of the letter. However, the dose listed in the figure caption is incorrect. The conclusions of this letter will not be impacted by the revision. In the caption of Fig. 1: SIMS profiles of P concentration are at a dose of 5 × 1015 ions/cm2.

原文English
頁(從 - 到)1015
頁數1
期刊Ieee Electron Device Letters
44
發行號6
DOIs
出版狀態Published - 1 6月 2023

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