Erratum: Fabricating a n+-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal(Applied Physics Letters (2015) 107(113503))

C. C. Hsu; C. H. Chou; S. Y. Wang; W. C. Chi; C. H. Chien; G. L. Luo

doi:10.1063/1.4937124

Erratum: Fabricating a n⁺-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal(Applied Physics Letters (2015) 107(113503))

C. C. Hsu, C. H. Chou, S. Y. Wang, W. C. Chi, C. H. Chien, G. L. Luo

研究成果: Comment/debate

原文	English
文章編號	239901
期刊	Applied Physics Letters
卷	107
發行號	23
DOIs	https://doi.org/10.1063/1.4937124
出版狀態	Published - 7 12月 2015

存取文件

10.1063/1.4937124

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引用此

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