Erratum: Direct patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (Electrochemical and Solid-State Letters (2003) 6 (G69))

T. C. Chang*, T. M. Tsai, Po-Tsun Liu, Y. S. Mor, C. W. Chen, Jeng-Tzong Sheu, Tseung-Yuen Tseng

*此作品的通信作者

研究成果: Comment/debate

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