Erratum: Direct patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (Electrochemical and Solid-State Letters (2003) 6 (G69))

T. C. Chang; T. M. Tsai; Po-Tsun Liu; Y. S. Mor; C. W. Chen; Jeng-Tzong Sheu; Tseung-Yuen Tseng

doi:10.1149/1.1576571

Erratum: Direct patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (Electrochemical and Solid-State Letters (2003) 6 (G69))

T. C. Chang^*, T. M. Tsai, Po-Tsun Liu, Y. S. Mor, C. W. Chen, Jeng-Tzong Sheu, Tseung-Yuen Tseng

^*此作品的通信作者

研究成果: Comment/debate

原文	English
頁（從 - 到）	L3
頁數	1
期刊	Electrochemical and Solid-State Letters
卷	6
發行號	7
DOIs	https://doi.org/10.1149/1.1576571
出版狀態	Published - 1 7月 2003

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10.1149/1.1576571

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引用此

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AU - Liu, Po-Tsun

AU - Mor, Y. S.

AU - Chen, C. W.

AU - Sheu, Jeng-Tzong

AU - Tseng, Tseung-Yuen

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