Epitaxial growth of TiC on (0001) 4H-SiC substrate by reactive sputtering

Kun An Chiu*, Jing Feng Lin, Kuan Yu Lin, Ping Hsun Wu, Hsueh I. Chen, Cheng Jung Ko, Chun Hua Chen, Li Chang

*此作品的通信作者

研究成果: Article同行評審

摘要

Heteroepitaxial TiC films were grown on semi-insulating (0001) 4H-SiC substrates at high temperature by using direct current (DC) magnetron reactive sputtering. The effect of the CH4 flux ratio in Ar on the crystalline quality of the films was investigated. X-ray diffraction (XRD) and transmission electron microscopy (TEM) results show that the deposited TiC films are heteroepitaxially grown on 4H-SiC substrates with the heteroepitaxial relationship between TiC and 4H-SiC in (111)TiC // (0001)4H-SiC and [11¯0]TiC // [112¯0]4H-SiC. The full width at half-maximum (FWHM) of X-ray rocking curve (XRC) of (111)TiC reflection can reach a minimum value of 0.039° and the resistivity of TiC film can be ∼ 80 μΩ⋅cm for deposition at 700 °C with 4% CH4 flow ratio. X-ray photoelectron spectroscopy (XPS) shows that the composition of TiC film is nearly in stoichiometry for 4% CH4 flow ratio. From the TEM results, it is observed that the TiC film is divided into a strained layer and a relaxed layer when the film thickness reaches a critical value over about 70 nm.

原文English
文章編號139874
期刊Thin Solid Films
775
DOIs
出版狀態Published - 30 6月 2023

指紋

深入研究「Epitaxial growth of TiC on (0001) 4H-SiC substrate by reactive sputtering」主題。共同形成了獨特的指紋。

引用此