Enhancing the performance of germanium channel nMOSFET using phosphorus dopant segregation

Che Wei Chen, Ju Yuan Tzeng, Cheng Ting Chung, Hung Pin Chien, Chao-Hsin Chien, Guang Li Luo, Pei Yu Wang, Bing-Yue Tsui

    研究成果: Article同行評審

    14 引文 斯高帕斯(Scopus)

    摘要

    In this letter, we present a high performance Ge n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a NiGe Schottky junction source/drain fabricated using phosphorus dopant segregation. Phosphorus atoms were implanted into NiGe and then driven toward the NiGe/p-Ge interface to depin the Fermi level and form a Schottky junction. A high effective barrier height (φBp) of 0.57 eV, resulting in a high junction current ratio of <104 at the applied voltage |Va| = ±1 V. The nMOSFET exhibited a high ION/IOFF ratio of ∼8 × 10 3 (ID), ∼105 (IS), and a subthreshold swing of 138 mV/decade. The nMOSFET developed in this letter exhibited greater transconductance and a drain leakage current that is more than two orders of magnitude lower compared with nMOSFETs with the conventional n+/p junction.

    原文English
    文章編號6679233
    頁(從 - 到)6-8
    頁數3
    期刊IEEE Electron Device Letters
    35
    發行號1
    DOIs
    出版狀態Published - 1 一月 2014

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