@inproceedings{277bc59d0b8a4226b1887381758bbe5a,
title = "Enhancement performance of GaN-based light-emitting diodes by modified patterned sapphire surface",
abstract = "The PSSs were fabricated by wet etching. Compared with the platform-PSS, the modified-PSS was still capped with a layer on the top platform after wet etching. The output power of the platform-PSS LED and modified-PSS are 27.3 mW and 29 mW, respectively, at an injection current of 20 mA. The output power of the modified-PSS LED is enhanced 6% compared with the platform-PSS. The results reveal that both electrical properties and optical properties of modified-PSS LED were improved.",
author = "Lin, {B. W.} and Hsu, {W. C.} and Yew-Chuhg Wu",
year = "2010",
month = dec,
day = "1",
doi = "10.1149/1.3485608",
language = "English",
isbn = "9781607681823",
series = "ECS Transactions",
number = "13",
pages = "67--69",
booktitle = "State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52",
edition = "13",
note = "State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 218th ECS Meeting ; Conference date: 10-10-2010 Through 15-10-2010",
}