Enhancement of stress-memorization technique on nMOSFETs by multiple strain-gate Engineering

Tsung Yi Lu, Chin Meng Wang, Tien-Sheng Chao*

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

An enhanced stress memorization-technique that utilizes a strain proximity free technique (SPFT) and a stacked-gate structure has been demonstrated by multiple strain-gate engineering. The electron mobility of n-channel metal-oxide semiconductor field effect transistors (nMOSFETs) with SPFT exhibit a 16% increase compared to that of counterpart techniques. SPFT avoids the limitation of stressor volume for performance improvement in high-density complementary metal oxide semiconductor circuits. We also found that optimization of stacked, random poly-Si-grain gate structure in combination with SPFT can improve mobility further to 22% more than a single poly-Si gate structure without SPFT.

原文English
期刊Electrochemical and Solid-State Letters
12
發行號1
DOIs
出版狀態Published - 19 11月 2008

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