@inproceedings{2f50eef6812148e6bc6e5e8f0877455d,
title = "Enhancement of performance and storage stability of thin-film transistor with InZnSnO/InGaZnO bilayer stack channel layers",
abstract = " We investigated on electrical performance and storage issues of high efficiency amorphous In-Sn-Zn-O (IZTO) thin film transistor. By capping additional In-Ga-Zn-O (IGZO) layer on IZTO to form the bilayer channel, the device's performance could obviously enhance. The mobility of devices without and with 20 nm, 40 nm IGZO capping layer was 24.2 cm 2 /Vs, 29.1 cm 2 /Vs and 33.1 cmVVs, respectively. The threshold voltage and substrate swing were improved proportionally with the thickness of IGZO capping layer. In addition, the storage issues of devices could also be eliminated by using the bilayer channel structure without any threshold voltage shift after placing in ambient environment for half month. Owning to the high performance and better storage stability, the TFTs with IZTO/IGZO bilayer channel is promising for next-generation AMOLEDs displays application. ",
keywords = "Bilayer Channel, High mobility, Threshold voltage (Vm), Transparent amorphous oxide semiconductor (TAOS)",
author = "Yeh, {Xiu Yun} and Fuh, {Chur Shyang} and Po-Tsun Liu and Chang, {Chih Hsiang} and Chang, {Che Chia} and Tsai, {Yun Chu}",
year = "2014",
month = jan,
day = "1",
language = "English",
series = "21st International Display Workshops 2014, IDW 2014",
publisher = "Society for Information Display",
pages = "292--294",
booktitle = "21st International Display Workshops 2014, IDW 2014",
address = "United States",
note = "null ; Conference date: 03-12-2014 Through 05-12-2014",
}