摘要
Enhancement of light output intensity for GaN-based vertical light-emitting diodes (LEDs), combining wafer bonding and the laser lift-off (LLO) process, employing an omnidirectional extraction surface with synthesized single-crystal ZnO nanorod arrays in aqueous solution at room temperature is presented. The light output intensity and wall-plug efficiency of the GaN-based LLO vertical LED with the omnidirectional extraction surface by ZnO nanorod arrays shows 38.9 and 41.2% increases, respectively, at 200 mA current injections compared to that of a vertical LED without ZnO nanorod arrays. The ZnO nanorod arrays not only support a current spreading layer but enhance the probability of photon escape through the omnidirectional extraction surface.
原文 | English |
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頁(從 - 到) | H84-H87 |
頁數 | 4 |
期刊 | Electrochemical and Solid-State Letters |
卷 | 11 |
發行號 | 4 |
DOIs | |
出版狀態 | Published - 30 1月 2008 |