Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process

Tan Fu Lei*, Jiann Heng Chen, Ming Fang Wang, Tien-Sheng Chao

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

This work prepares and demonstrates, for the first time, a high-quality polysilicon oxide, by combining N2O nitridation and Chemical Mechanical Polishing (CMP) process. Our results demonstrate that capacitors with this process have an improved Qbd (charge-to-breakdown) due to the planar surface and more concentrated nitrogen at the interface of polysilicon oxide.

原文English
頁(從 - 到)235-237
頁數3
期刊IEEE Electron Device Letters
20
發行號5
DOIs
出版狀態Published - 1 一月 1999

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