Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process

Tan Fu Lei; Jiann Heng Chen; Ming Fang Wang; Tien-Sheng Chao

doi:10.1109/55.761025

Enhancement of integrity of polysilicon oxide by using a combination of N₂O nitridation and CMP process

Tan Fu Lei^*, Jiann Heng Chen, Ming Fang Wang, Tien-Sheng Chao

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

This work prepares and demonstrates, for the first time, a high-quality polysilicon oxide, by combining N₂O nitridation and Chemical Mechanical Polishing (CMP) process. Our results demonstrate that capacitors with this process have an improved Q_bd (charge-to-breakdown) due to the planar surface and more concentrated nitrogen at the interface of polysilicon oxide.

原文	English
頁（從 - 到）	235-237
頁數	3
期刊	Ieee Electron Device Letters
卷	20
發行號	5
DOIs	https://doi.org/10.1109/55.761025
出版狀態	Published - 1999

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10.1109/55.761025

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title = "Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process",

abstract = "This work prepares and demonstrates, for the first time, a high-quality polysilicon oxide, by combining N2O nitridation and Chemical Mechanical Polishing (CMP) process. Our results demonstrate that capacitors with this process have an improved Qbd (charge-to-breakdown) due to the planar surface and more concentrated nitrogen at the interface of polysilicon oxide.",

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AU - Lei, Tan Fu

AU - Chen, Jiann Heng

AU - Wang, Ming Fang

AU - Chao, Tien-Sheng

PY - 1999

Y1 - 1999

N2 - This work prepares and demonstrates, for the first time, a high-quality polysilicon oxide, by combining N2O nitridation and Chemical Mechanical Polishing (CMP) process. Our results demonstrate that capacitors with this process have an improved Qbd (charge-to-breakdown) due to the planar surface and more concentrated nitrogen at the interface of polysilicon oxide.

AB - This work prepares and demonstrates, for the first time, a high-quality polysilicon oxide, by combining N2O nitridation and Chemical Mechanical Polishing (CMP) process. Our results demonstrate that capacitors with this process have an improved Qbd (charge-to-breakdown) due to the planar surface and more concentrated nitrogen at the interface of polysilicon oxide.

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U2 - 10.1109/55.761025

DO - 10.1109/55.761025

M3 - Article

AN - SCOPUS:0032631389

SN - 0741-3106

VL - 20

SP - 235

EP - 237

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 5

ER -

Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process

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Enhancement of integrity of polysilicon oxide by using a combination of N₂O nitridation and CMP process