Graded-gate-oxide(GGO)-MOSFETs with various degrees of gate-drain(source) overlap (and grading thickness of the gate oxide near the polysilicon-gate edge) have been investigated for hot-electron generation. Compared with a conventional MOSFET, the GGO-MOSFET exhibits higher substrate and gate currents when the gate voltage is raised above a critical value (Vgc). Vgc is found to be dependent on the drain voltage. It is also a smooth function of the degree of gate-drain(source) overlap, which can be controlled by the fabrication process. These experimental findings are supported by results obtained from the two-dimensional analysis of a similar device structure. Implications of the GGO phenomena on MOS technologies are discussed. Possible use of the GGO-MOSFET in EPROM is proposed.
|頁（從 - 到）||88-91|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 1 12月 1984|